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11.30 - 11.40. - - . .. 11.40-11.45. .

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11.45 - 12.00. , .. 12.00 14.30. III-N ...

12.00 12.15. III-N

SiC MOCVD

.., .., .., .., .., .., .. 12.15 12.30. MOC AlGaN .. , .. , .. 12.30 12.45. a-(In)GaN .., .., .., .., .., .., .., .. 12.45 13.00. GaN Si(111) :

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.., .., .., .., .., .., .. , C.., ., .., H.S. Park M. Koike 13.00 13.15.

III-N

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13.15 13.35. CVD TECHNOLOGY AND PRODUCTION FOR SOLID STATE LIGHTING F. Schulte, B. Schineller, M. Heuken 13.35 13.55 ROLE OF COMPUTATION FLUID DYNAMIC IN THE NEW MOCVD EQUIPMENT AND

PROCESS DEVELOPMENT FOR GaN MATERIALS

B. Mitrovic, A. Gurary, B. Quinn, E. Armour 13.55 14.10. TEMPERARURE MEASUREMENT AND CONTROL DURING DEPOSITION OF THE GaN

RELARED MATERIALS

M. Belousov, B. Mitrovic, S. Ting, A. Gurary, B. Quinn 14.10-14.30. ON THE PHYSICS OF OPTICAL IN-SITU MONITORING OF MOVPE GROWTH PROCESSES

FOR STATE-OF-THE-ART III-NITRIDE DEVICES

E. Steimetz, F. Brunner, T. Schenk, T. Trepk, and J.-T. Zettler

   

15.30 16.30. III-N ...

15.30 15.45. GaN - .. , .. , .. , .. , .. , .. , .. , ..

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19.15. 20.50.

   

10.10 10.30 II-O/III-N :

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.. , .. , .. , .. 10.45 11.00 (-SiC)-(-SiC ) Si(111) .., .., .., ..,.., .., .., .. 11.00 11.15 ZnO .. , .. , .. , .. 11.15 11.30 GaN,

Eu Zn

.., .., .., .., .., .

   

12.05 12.20

InGaN/GaN

.. , .. 12.20 12.35

InGaN/GaN

.. , .. , .. 12.35-12.50 OPTICAL AND ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURES GROWN

ON SILICON AND SAPPHIRE SUBSTRATES BY MOVPE

N. V. Rzheutski, A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, A. S. Shulenkov, A. I. Stognii, M.

Heuken, B. Schineller, H. Kalisch, R. H. Jansen 12.50 13.05 LIGHT-INDUCED DIFFRACTION KINETICS AND PHOTOLUMINESCENCE IN EPITAXIAL

GaN GROWN ON SAPPHIRE SUBSTRATES

V. N. Pavlovskii, E. V. Lutsenko, A. V. Danilchyk, G. P. Yablonskii, T. Malinauskas, R. Aleksiejnas, K. Jarainas, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken

   

16.15 16.30 AlGaN/GaN .., .., .., .., . 16.30 16.45 AlN/AlGaN/GaN/AlGaN .. , .. , .., .., .., .., .., .., .., .., .., .. , .. 16.45 17.00 AlN/AlGaN/GaN/AlGaN

-

.. , .. , .. , .. , .. , .. , ..

, .. , .. , .. , .. , .. , ..

, .. , .. , .. 17.00 17.15 InGaAlN HEMT- .., .. , .., .., .. 17.15 17.30

- ˨

.. , .. , .. , .. , .. , .. , .. , .., A..

   

18.00 18.15 III

.. , .. , .. , .. 18.30 18.45 :

..,..,..,.., .., .., .., .., InHwan Lee, S.J.Pearton, .., .., .. 18.45 19.00.

- -.

.., .., .., .., .., .., .. 19.00 19.15 - - -.

.., .., .., .., .., .., .., .. 19.15. 20.50.

   

10.15 10.30 InGaN AlGaN .. , . . , . . 10.30 10.45 p-n- InGaN/GaN/AlGaN .., . , .., .., .., .. 10.45 11.00 p-n- InGaN/AlGaN/GaN .., .., .., .., .., .., .. 11.00 11.15 GaAlN-p/GaInN/n-GaN .., .. 11.15 11.30

   

11.50 12.10 .. 12.10 12.25

. . 12.25 12.40 300 70 / .., .., .., ..

12.40 12.55

.. 12.55 13.10 .. , .. , .. , .. 13.10 13.25 . , . 13.25 13.40

- AlGaInN

. . , . . , . . , . . 13.40 15.00

   

15.00 16.45 .. 15.00 15.15. InGaN/GaN .., .., .., .., .., .., .., .. 15.15 15.30

.., .., .., .., .., .., .., .., .., .., .. 15.30 15.45 InGaN .. , .. , .. 15.45 16.00 InGaN/GaN

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.. , .. , .. , .. , .. , .. 16.00 16.15 InGaN/GaN .. , .. , .. 16.15 16.30 .. , .. , .. , .. , .. , .. 16.30 16.45

.., .., .., .., ..

16.50.-17.10.

.. - .., .. 16.50. - 17.00.

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31 16.00 18.45 1 13.05 14.00 . ..

1 p- - GaN

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2 AlGaN -

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3

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5 InGaN

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10 InGaN AlGaInP

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11

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13 ר ٨

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15 GaN,

- ,

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16 GaN(Fe),

-

. , . , .., .., A.M.Dabiran, A.M.Wowchak, P.P.Chow 17 InxGa1-xN .. , .. , .. , .. , .. , ..

18 InGaN

.. , .. , .. , .. , .. , .. , ..

19 GaN

.. , .. , ..

20

InGaN/GaN, Eu

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21

GaN, Eu, Er

.., .., ..,, .. , .. , ..

22 ,

(SiC)1-x(AlN)x .., .., .., ..

23 ۓ

n-GaN(0001) .. , .. , .. , ..

24 2D

Cs, Ba/n-GaN(0001) .. , .. , ..

25

InGaN .. , .. , .. , .. , .. , .. , ..

26 -

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.., .., .., .., .., .. , . ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

ACOL Technologies S.A.

, ACOL Technologies S.A.

. .., . .., . .., . .., . .., . .., . .., , ACOL Technologies S.A.

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